Nanowired Structure, Optical Properties and Conduction Band Offset of RF Magnetron-Deposited n-Si\In2O3:Er Films Научная публикация
Журнал |
Materials Research Express
, E-ISSN: 2053-1591 |
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Вых. Данные | Год: 2020, Том: 7, Номер: 12, Номер статьи : 125903, Страниц : 11 DOI: 10.1088/2053-1591/abd06b | ||||||||||||
Ключевые слова | Silicon; In2O3; Er; thin films; nanowires; photoluminescence; band offset; thermionic emission; > | ||||||||||||
Авторы |
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Организации |
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Реферат:
RF magnetron-deposited Si\In2O3:Er films have the structure of the single-crystalline bixbyite bcc In2O3 nanowires bunched into the columns extended across the films. The obtained films have a typical In2O3 optical band gap of 3.55 eV and demonstrate the 1.54 mu m Er3+ room temperature photoluminescence. The current across the film flows inside the columns through the nanowires. The current through the MOS-structure with the intermediate low barrier In2O3:Er dielectric was investigated by the thermionic emission approach, with respect to the partial voltage drop in silicon. Schottky plots ln(I/T-2) versus 1/kT of forward currents at small biases and backward currents in saturation give the electron forward n-Si\In2O3:Er barrier equal to 0.14 eV and the backward In\In2O3:Er barrier equal to 0.21 eV.
Библиографическая ссылка:
Feklistov K.V.
, Lemzyakov A.G.
, Prosvirin I.P.
, Gismatulin A.A.
, Shklyaev A.A.
, Zhivodkov Y.A.
, Krivyakin G.К.
, Komonov A.I.
, Kozhukhov А.
, Spesivsev E.V.
, Gulyaev D.V.
, Abramkin D.S.
, Pugachev A.M.
, Esaev D.G.
, Sidorov G.Y.
Nanowired Structure, Optical Properties and Conduction Band Offset of RF Magnetron-Deposited n-Si\In2O3:Er Films
Materials Research Express. 2020. V.7. N12. 125903 :1-11. DOI: 10.1088/2053-1591/abd06b WOS Scopus РИНЦ CAPlus OpenAlex
Nanowired Structure, Optical Properties and Conduction Band Offset of RF Magnetron-Deposited n-Si\In2O3:Er Films
Materials Research Express. 2020. V.7. N12. 125903 :1-11. DOI: 10.1088/2053-1591/abd06b WOS Scopus РИНЦ CAPlus OpenAlex
Файлы:
Полный текст от издателя
Даты:
Поступила в редакцию: | 24 окт. 2020 г. |
Принята к публикации: | 3 дек. 2020 г. |
Опубликована online: | 16 дек. 2020 г. |
Идентификаторы БД:
Web of science: | WOS:000599483800001 |
Scopus: | 2-s2.0-85098750392 |
РИНЦ: | 45035535 |
Chemical Abstracts: | 2021:390496 |
OpenAlex: | W3107987152 |